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MAS110S
MAS110S
Fast Turn-off Asymmetric Thyristor/Diode Module
Replaces April 1999 version, DS4200-4.0 DS4200-5.0 January 2000
APPLICATIONS
q q q q
High Frequency High Power Choppers And Inverters. Ultrasonic Generators. Welding. PWM Inverters.
KEY PARAMETERS VDRM 1400V ITSM 2000A IT(AV) per arm 110A Visol 2500V tq 10/12/15s
DESCRIPTION
The MAS 110S is a fast thyristor/diode module in an electrically isolated package. The semiconductors are are pressure contact mounted giving high resistance to thermal fatigue, and having excellent heat dissipation qualities. Isolation medium is non-toxic alumina. The MAS110S is recognised under the 'Recognised Component Program of Underwriters Laboratories Inc. USA. File number E151069.
Outline type code: MAS110S See Package Details for further information. Fig.1 Package outline (not to scale)
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 1400 1200 1000 800 600 Conditions
1
G1
K1 2
MAS110S 14 MAS110S 12 MAS110S 10 MAS110S 08 MAS110S 06
Tvj = 125C, IDRM = 50mA, VDSM = VDRM + 100V
Fig.2 Single circuit
For full description of part number see 'Ordering Information'.
THYRISTOR CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean forward current RMS value Conditions Half wave resistive load, Tcase = 75oC Tcase = 75oC Max. 110 175 Units A A
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MAS110S
THYRISTOR SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 0% VDRM Max. 2.0 20.0 x 103 Units kA A2s
THYRISTOR DYNAMIC CHARACTERISTICS
Symbol VTM IDRM dV/dt dI/dt Parameter Maximum on-state voltage Peak off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At 600A peak, Tcase = 25oC At VDRM, Tcase = 125oC To 60% VDRM Tj = 125oC, Gate open circuit From 67% VDRM to 600A, Gate source 20V, 20 tr = < 0.5s, Tj = 125C At Tvj = 125oC At Tvj = 125oC IT = 100A, Tj = 125C, dIR/dt = 30A/s, VGK = 0V dV/dt = 20V/s to 60% VDRM, VR = 1V. tq code: W tq code: S tq code: X Repetitive 50Hz Min. Max. 2.9 70 1000 500 Units V mA V/s A/s
VT(TO) rT tq
Threshold voltage On-state slope resistance Turn-off time
-
1.6 1.4 10 12 15
V m s s s
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MAS110S
THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Average timing = 10ms Conditions VDRM = 12V, Tcase = 25oC, RL = 30 VDRM = 12V, Tcase = 25oC Typ. Max. 4.0 250 7.0 10 50 15 Units V mA V A W W
DIODE CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean forward current RMS value Conditions Half wave resistive load, Tcase = 75oC Tcase = 75oC Max. 112 175 Units A A
DIODE SURGE RATINGS - PER ARM
Symbol IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 130oC VR = 0% VRRM Max. 3.5 61.25 x 103 Units kA A2s
DIODE DYNAMIC CHARACTERISTICS
Symbol VFM IRRM trr VTO rT Forward voltage Peak reverse current Reverse recovery time Threshold voltage Forward slope resistance Parameter Conditions At 600A, Tcase = 25C. At VRRM, Tcase = 125C. Tcase = 125C, dIR/dt = -50V/s, IFM = 200A At Tvj = 125C. At Tvj = 125C. Max. 2.65 70 1.3 1.6 1.5 Units V mA s V m
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MAS110S
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Parameter Thermal resistance - junction to case (Thyristor or diode) Thermal resistance - case to heatsink (Thyristor or diode) Virtual junction temperature Operating temperature range Storage temperature range Isolation voltage Mounting torque Commoned terminals to base plate. AC RMS, 1 min, 50Hz. dc Conditions Min. Max. 0.21 Units
o
C/W
Rth(c-h)
Mounting force 6Nm with mounting compound. -
-
0.07
o
C/W
Tvj Top Tstg Visol -
-40 -40 -
125 125 125 2.5 6.0
o
C
o
C C
o
kV Nm
ORDERING INFORMATION
The module type number is made up as follows:
MAS XXX S XX W Turn-off time code Voltage grade. VDRM/100 Single thyristor/diode configuration Nominal IF(AV) at Tcase = 75C Pressure contact asymmetric thyristor/diode module Examples: MAS 110 S 12 W MAS 110 S 08 X
MODULE MOUNTING RECOMMENDATIONS
s Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information and loss curves in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. s The heatsink surface must be smooth and flat; a surface finish of N6 (32in) and a flatness within 0.05mm (0.002") are recommended. s Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch BriteTM or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. s An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. s After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 6Nm (55lb.ins) is reached at both ends. s It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module.
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MAS110S
Curves
2000
Instantaneous on-state current IT - (A)
1500
Tj = 125C 1000
500
0 1.0
2.0 3.0 4.0 Instantaneous on-state voltage VT - (V)
5.0
Fig.3 Maximum (limit) on-state characteristics (thyristor only)
5000
4000
Instantaneous forward current IF - (A)
3000
Tj = 125C 2000
1000
0 0 2.0 4.0 6.0 Instantaneous forward voltage VF - (V) 8.0 10.0
Fig.4 Maximum (limit) forward characteristics (diode only)
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MAS110S
100
PGM = 50W
Gate trigger voltage VGT - (V)
10 Tj = -40C
1.0
0.1 0.01
0.1 1.0 Gate trigger current IGT - (A)
Tj = +125C
Tj = +25C
10
Fig.5 Gate characteristics
1000
ITM = 2000A 100 ITM = 1000A
Energy per pulse - (mJ)
ITM = 600A ITM = 400A 10 ITM = 200A ITM = 100A
1.0 1.0
10 Pulse width tp - (s)
100
1000
Fig.6 Sinusoidal energy per pulse (thyristor only) 6/9
MAS110S
100 Tj = 125C IFM = 400A IFM = 200A
Recovered charge QR - (C)
IFM = 100A IFM = 60A IFM = 40A 10
1.0 1.0
10 100 Rate of rise of reverse current dIRR/dt - (A/s)
1000
Fig.7 Recovered charge (diode only)
1.0
Thermal impedance - (C/W)
0.1
0.01 0.001
0.01
0.1 Time - (s)
1.0
10
Fig.8 Maximum (limit) transient thermal impedance (thyristor only)
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MAS110S
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
23 O6.5 47
Recommended fixings for mounting: Recommended mounting torque: Recommended torque for electrical connections: Maximum torques for electrical connections: Nominal weight:
12.8 13 80 M6 K1
G1
34
1
2
2.8x0.8
30 94
M6 socket head cap screws. 6Nm (55lb.ins) 5Nm (44lb.ins) 8Nm (70lb.ins) 350g
Module outline type code: MP02
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MAS110S
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4200-5 Issue No. 5.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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